Optoelectronic module

ABSTRACT

An optoelectronic module having an optoelectronic device with a contact conductor and a connection carrier with a connection area. The contact conductor is electrically conductively and/or thermally conductively connected to the connection area. A local, delimited heating region is formed on the contact conductor or the connection carrier has a cutout, which is at least partly covered by the contact conductor. A method which enables simplified and reliable production of an optoelectronic module is also described.

RELATED APPLICATIONS

This patent application claims the priority of German patent application10 2006 036 544.5 filed Aug. 4, 2006, the disclosure content of which ishereby incorporated by reference.

FIELD OF THE INVENTION

The present invention relates to an optoelectronic module and to amethod for producing an optoelectronic module.

BACKGROUND OF THE INVENTION

In the production of conventional optoelectronic modules, optoelectronicdevices are arranged on circuit boards and soldered onto the latter. Theso-called reflow soldering method is generally used for this purpose. Inthis case, an electrically conductive connection is produced between theconnections of the optoelectronic devices and the conductor tracks ofthe circuit board by means of a solder by virtue of the circuit boardtogether with the optoelectronic devices and the solder being heated ina furnace to a temperature lying above the melting point of the solder.

Soldering process durations of approximately five minutes are typical inreflow soldering. In this case, the maximum temperature set during thesoldering process must be chosen such that although the solder melts,temperature-dictated damage to the devices to be soldered does not yetoccur. Therefore, such reflow soldering is often difficult to realizefor heat-sensitive devices.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide an optoelectronicmodule which can be reliably produced in a simplified manner.

Another object of the present invention is to provide a method forproducing such a module.

These and other objects are attained in accordance with one aspect ofthe present invention directed to an optoelectronic module that has anoptoelectronic device with a contact conductor and a connection areaformed on a connection carrier. In this case, the contact conductor iselectrically conductively and/or thermally conductively connected to theconnection area. A local, delimited heating region is formed on thecontact conductor or the connection carrier has a cutout, which is atleast partly covered by the contact conductor.

A large-area or complete heating of the optoelectronic module for theformation of the local, delimited heating region can advantageously beavoided. The cutout facilitates the formation of an electrically and/orthermally conductive connection by locally heating the contact conductorby means of coherent radiation that impinges on the optoelectronicmodule from that side of the connection carrier which is remote from theoptoelectronic device.

A local, delimited heating region on the contact conductor is understoodto mean, for example, an insular region of the contact conductor whichis spaced apart at least from an edge of the contact conductor. A local,delimited heating region can arise for example in an impingement regionof, preferably focused, coherent radiation, for example laser radiation,since large amounts of heat can be fed to a local region of the contactconductor by the radiation in a short time. Outside the impingementregion, by contrast, the contact conductor is not directly heated by theradiation source and is therefore only comparatively weakly heatedrelative to the impingement region of the radiation. Furthermore, alocal, delimited heating region on the contact conductor can bemanifested in the fact that, in said region, the surface of the contactconductor is deformed or discolored, for example, as a consequence of alocal heat input or the microstructure of the contact conductor isaltered. By contrast, a local, delimited heating region does not occurin the course of heating in a furnace, as is typical in the reflowsoldering method, since the entire component to be soldered and not justthe contact conductor is locally heated.

Preferably, the local, delimited heating region is formed by means oflocally heating the optoelectronic module by, preferably focused,coherent radiation, for example laser radiation.

According to an embodiment of the invention, the optoelectronic modulehas an optoelectronic device with a contact conductor and a connectioncarrier with a connection area. In this case, the contact conductor andthe connection area are electrically conductively and/or thermallyconductively connected by means of locally heating the optoelectronicmodule by coherent radiation, preferably laser radiation. Direct heatingof the entire optoelectronic module and in particular of the entirecontact conductor by means of the coherent radiation is advantageouslynot necessary for the production of the electrically conductive and/orthermally conductive connection between the contact conductor and theconnection area.

This is particularly advantageous for optoelectronic devices since thelatter are generally heat-sensitive and there is therefore the risk ofpermanent damage in the event of the optoelectronic devices beingoverheated.

In one configuration of the second embodiment, a local, delimitedheating region is formed on the contact conductor or the connectioncarrier has a cutout, which is at least partly covered by the contactconductor.

A large-area or complete heating of the optoelectronic module canadvantageously be avoided for the formation of the local, delimitedheating region. The cutout facilitates the formation of an electricallyand/or thermally conductive connection by locally heating the contactconductor by means of coherent radiation that impinges on theoptoelectronic module from that side of the connection carrier which isremote from the optoelectronic device.

In one configuration, the local, delimited heating region is formed on aside of the contact conductor which is remote from the connection area.In this case, the local, delimited heating region can be formed by meansof coherent radiation that impinges on the optoelectronic module fromthat side of the contact conductor which is remote from the connectionarea.

In a further configuration, the electrically conductive and/or thermallyconductive connection between the contact conductor and the connectionarea is produced by means of a connecting means, in particular a solder.In particular, the solder is at least partly arranged between thecontact conductor and the connection area.

In a further configuration, the optoelectronic device is embodied as asurface mountable device (SMD). Preferably, in this case the contactconductor is completely arranged on that side of the connection carrierwhich faces the optoelectronic device. Consequently, the contactconductor does not extend through a cutout in the connection carrier, aswould be the case for a wired optoelectronic device (through-holedesign).

In a further configuration, an optical unit is fixed to theoptoelectronic device. The optical unit can be embodied as a separateoptical unit. Consequently, it is, in particular, not part of anencapsulant into which a semiconductor chip of an optoelectronic devicethat is provided for generating radiation is usually embedded.

In one development, the optoelectronic device or the respectiveoptoelectronic device has a housing body.

The optical unit can be fixed to the housing body. The optical unit canat least partly extend beyond a lateral face delimiting the housingbody.

In one development, the optical unit contains a plastic. An optical unitof this type can advantageously be produced in a cost-effective manner.By way of example, the optical unit may contain a silicone, athermoplastic or a thermosetting plastic. In particular, the meltingpoint of the plastic may be lower than the melting point of theconnecting means, for example of the solder.

The risk of damage to the optical unit in the course of forming theelectrically conductive and/or thermally conductive connection betweenthe contact conductor of the optoelectronic device is advantageouslyreduced on account of the only local heating of the optoelectronicmodule.

In a further configuration, the optoelectronic device has a furthercontact conductor.

In one configuration variant, the contact conductor and the furthercontact conductor project from different, in particular from opposite,sides of the housing body. Stresses that possibly occur during themounting of the optoelectronic device thus act approximatelysymmetrically on the housing body and can at least partly compensate forone another. The risk of deformation of the optoelectronic device or oftilting of the optoelectronic device during mounting can advantageouslybe reduced in this way.

In a further configuration variant, at least one contact conductor isformed on that side of the housing body which faces the connectioncarrier. Contact conductors formed in this way enable particularlyspace-saving mounting of the optoelectronic devices.

In one development, the optoelectronic device has, in addition to twoelectrical contact conductors, a thermal contact conductor, which isformed on that side of the housing body which faces the connectioncarrier. In this case, the thermal contact conductor is provided fordissipating the heat generated during operation of the optoelectronicdevice into the connection carrier. Consequently, said thermal contactconductor is not provided for making electrical contact with theoptoelectronic device. For efficient heat dissipation, a thermal contactconductor by comparison with an electrical contact conductor ispreferably formed for a comparatively large-area connection to theassociated connection area of the connection carrier.

A contact conductor of the optoelectronic device which is provided forelectrically contact-connecting the device to the associated connectionarea can be embodied in metallic fashion and may contain a materialhaving high electrical conductivity such as copper, for example, orcomprise such a material.

In the case of a contact conductor which is provided for a thermalconnection of the optoelectronic device to the associated connectionarea, a metallic embodiment is possible as in the case of an electricalcontact conductor. An electrically insulating material having goodthermal conductivity, for example a suitable ceramic, can also findapplication.

An electrically conductive connection is typically thermally conductiveas well. In contrast to this, a thermally conductive connection need notnecessarily be electrically conductive as well. An electricallyconductive connection is not necessary particularly in the case of acontact conductor which is provided for a thermal connection of theoptoelectronic device to the associated connection area.

The optoelectronic device can be embodied as a radiation-emitting deviceand furthermore as a light-emitting diode (LED) or laser diode.

In a further configuration, the optoelectronic module comprises at leastone further optoelectronic device with a contact conductor. Theoptoelectronic devices are preferably arranged in a manner spaced apartfrom one another on the connection carrier. In particular, the contactconductor of each optoelectronic device is preferably assigned arespective connection area of the common connection carrier. It goeswithout saying that the optoelectronic module can also compriseconsiderably more than two optoelectronic devices, for example 20optoelectronic devices or more.

The further optoelectronic device or the further optoelectronic devicescan also have at least one of the features described in the previousconfigurations.

In a further possible configuration, at least two optoelectronic devicesof the optoelectronic module emit radiation in different color regionsof the electromagnetic spectrum. The optoelectronic module can haveoptoelectronic devices which emit in the red, green and blue colorregions of the visible spectrum. In particular, the color loci andintensities of the radiation emitted by the optoelectronic devices arepreferably chosen such that a white color impression arises for thehuman eye as a result of additive color mixing of the three colorcomponents red, green and blue. Such white mixed radiation isparticularly expedient for optoelectronic modules which are provided forbacklighting a display device, for example an LCD.

The optical unit can be formed for forming a directional emissioncharacteristic of the optoelectronic device. Preferably, the emissioncharacteristic is embodied in such a way that a uniform, homogeneousillumination of a display device by the optoelectronic module can beobtained in a simplified manner. An optical unit of this type which isarranged, and in particular fixed, at the housing body or at the housingbody of the respective optoelectronic device enables a particularlyspace-saving design of the optoelectronic module and thus the formationof a particularly flat optoelectronic module for the backlighting of adisplay device.

Another aspect of the invention is directed to a method for producing anoptoelectronic module comprising an optoelectronic device with at leastone contact conductor and a connection carrier with at least oneconnection area comprising the steps of:

a) providing the connection carrier with the connection area,

b) arranging the optoelectronic device on the connection carrier, and

c) locally heating the optoelectronic module in a predeterminedimpingement region by means of coherent radiation. In this latter step,known herein as “step c)”, an electrically conductive and/or thermallyconductive connection is produced between the contact conductor and theconnection area.

Accordingly, for producing an electrically conductive and/or thermallyconductive connection between the contact conductor and the connectionarea, advantageously only a local region of the optoelectronic module isheated by means of the coherent radiation. Consequently, it is notnecessary for the entire optoelectronic module to be heated.Furthermore, the heat input introduced overall into the optoelectronicmodule is advantageously reduced. This is particularly advantageous foroptoelectronic devices since the latter are generally heat-sensitiveand, therefore, complete heating of the optoelectronic device may leadto damage or destruction.

Consequently, in step c), the optoelectronic module is directly heatedby the radiation only in the predetermined impingement region. In thiscase, a local, delimited heating region can form on the contactconductor, which region overlaps in particular the predeterminedimpingement region of the radiation in step c).

In one configuration, in step c), the optoelectronic module is movedrelative to the radiation source during the production of theelectrically and/or thermally conductive connection. The movement ispreferably effected continuously, and is particularly preferablyeffected at a constant speed. By way of example, the optoelectronicmodule can be moved on a conveyor device, for instance a conveyor belt,during production. Interruption of the movement, for example by stoppingthe conveyor device, is not necessary for producing the electricallyconductive and/or thermally conductive connection. The productionduration for a plurality of optoelectronic modules can advantageously beshortened as a result.

The radiation is furthermore tracked to the movement of theoptoelectronic module relative to the radiation source in such a waythat the radiation impinges on the optoelectronic module within thepredetermined impingement region during the heating. Direct heating ofthe optoelectronic module outside the predetermined impingement regionby the radiation can thus be minimized.

In a further configuration, the radiation is directed onto theoptoelectronic module by means of a movable deflection optical unit.Said movable deflection optical unit may be formed for example by meansof a mirror that can be rotated with respect to at least one axis. Themovable deflection optical unit is furthermore formed by means of twomirrors, in which case each mirror can be rotated about its own axis ineach case. In particular, the deflection optical unit is embodied insuch a way that the radiation can be deflected by rotation of themirrors about the respective axis along two mutually perpendiculardirections. As a result, the radiation can be directed onto thepredetermined impingement region on the optoelectronic module in asimplified manner by means of the deflection optical unit.

In a further configuration, the coherent radiation source is formed by alaser, for example a solid-state laser. Laser radiation may bedistinguished by particularly good focusability of the radiation andenables high power densities, in particular when focusing the laserradiation. As a result, a comparatively small region on theoptoelectronic module can be locally heated. On account of the onlylocal heating of the optoelectronic module, the heat input introducedoverall into the optoelectronic module is advantageously comparativelylow in comparison with the reflow soldering method.

The focusing of the laser radiation can be achieved by means of a beamconcentrating optical unit. In this case, the concentration of the laserradiation is preferably effected before the radiation impinges on thedeflection optical unit.

In one development, the power density of the coherent radiation thatimpinges in the predetermined impingement region amounts in this regionto between 1 and 500 W/(mm²) inclusive, particularly preferably between10 and 150 W/(mm²) inclusive. On account of the high power densities incomparison with the reflow soldering method, a large amount of heat canbe deposited within the predetermined impingement region in a very shorttime, whereby the production duration of an electrically conductiveand/or thermally conductive connection can be shortened.

In a further development, in step c), the radiation from the radiationsource impinges on the predetermined impingement region on theoptoelectronic module for 2 s or less, preferably 500 ms or less, forexample 200 ms. On account of the high power densities that can beobtained by means of a coherent radiation source, such a shortirradiation time is sufficient for producing an electrically conductiveand/or thermally conductive connection.

The production of an electrically conductive and/or thermally conductiveconnection can therefore advantageously be shortened. Particularly inthe case of an optoelectronic module which contains only comparativelyfew optoelectronic devices, for instance 100 devices or fewer, theduration of the production of the electrically conductive and/orthermally conductive connections for an optoelectronic module isadvantageously shortened by comparison with the reflow method.

In one configuration, in step c), the movable deflection optical unit ismoved proceeding from a starting position for tracking the radiation,and the deflection optical unit is returned to the starting positionafter step c) in a step d). It is furthermore the case that, after stepd), step c) is carried out for a further, separate optoelectronicmodule. By iteratively repeating the method, a plurality ofoptoelectronic modules can thus be produced rapidly andcost-effectively.

In a further configuration, the electrically conductive and/or thermallyconductive connection is produced by means of an electrically conductiveand/or thermally conductive connecting means, for example a solder or asolder paste. The energy introduced into the predetermined impingementregion by means of the radiation from the coherent radiation source isexpediently sufficient to heat the thermally conductive and/orelectrically conductive connecting means above the melting pointthereof. An electrically conductive and/or thermally conductive andpreferably mechanically stable connection is then formed after theconnecting means has cooled.

The electrically conductive and/or thermally conductive connecting meanscan be applied to the connection carrier at least in regions, and inparticular to the connection areas of the connection carrier, beforestep c).

In a variant of the method, in step c), the radiation impinges on thecontact conductor from that side of the contact conductor which isremote from the connection carrier. In this case the connecting meanscan be heated through the contact conductor to a temperature above themelting point of the connecting means. This variant is primarilyexpedient if the contact conductor projects laterally from the housingbody of the optoelectronic module and is thus accessible from that sideof the contact conductor which is remote from the connection carrier.

In a further variant, the radiation from the radiation source isradiated through a cutout of the connection carrier from that side ofthe connection carrier which is remote from the contact conductor. Inparticular, the radiation passing through the cutout leads to heating ofthe connecting means to a temperature above the melting point of theconnecting means, so that a thermally conductive and/or electricallyconductive connection between the contact conductor and the connectionarea is produced by means of the momentarily liquefied connecting means.

In a further configuration, the radiation from the radiation source issplit into a plurality of partial beams by means of a beam-splittingassembly before impinging on the optoelectronic module. Particularlypreferably, the beam-splitting assembly is arranged in the beam pathbetween the radiation source and the deflection optical unit, inparticular between an optical fiber into which the radiation from theradiation source is coupled and the beam concentrating optical unit. Theplurality of partial beams can therefore be directed onto theoptoelectronic module by means of the deflection optical unit, so thatthe optoelectronic module can be locally heated simultaneously in aplurality of predetermined impingement regions. In this case, the numberof partial beams corresponds to the number of predetermined impingementregions.

The beam-splitting assembly can be formed in movable fashion in such away that a distance at which a partial beam and a further partial beamimpinge on the optoelectronic module can be set by means of a movementof the beam-splitting assembly along the beam path of the coherentradiation. In this case, the distance at which the partial beam and thefurther partial beam impinge on the optoelectronic module can be set bymeans of movement of the beam-splitting assembly in such a way that, instep c), the partial beams in each case impinge on the optoelectronicmodule within a predetermined impingement region. Consequently, anelectrically and/or thermally conductive connection to the respectiveconnection area can be produced simultaneously within each impingementregion.

Particularly in the case of optoelectronic devices which have twocontact conductors and are formed symmetrically with regard to thecontact conductors, in the case of simultaneously producing anelectrically conductive and/or thermally conductive connection of twocontact conductors to the respective connection area, it is possible toachieve a reduction of the stresses that occur during the production ofthe contact.

Typically, an optoelectronic module comprises a plurality ofoptoelectronic devices each having a contact conductor and a furthercontact conductor. In this case, the contact conductors are respectivelyassigned a dedicated connection area on the connection carrier. The atleast one further optoelectronic device is likewise arranged on theconnection carrier in step b).

In step c), firstly the contact conductor and the further contactconductor of an optoelectronic device can be electrically conductivelyand/or thermally conductively connected to the respectively assignedconnection area and step c) is subsequently carried out for a furtheroptoelectronic device of the same optoelectronic module.

It is also conceivable for the number of partial beams made available tobe such that all the contact conductors of the optoelectronic devices ofan optoelectronic module are simultaneously electrically conductivelyand/or thermally conductively connected to the respective connectionarea. For this purpose, the number of partial beams expedientlycorresponds to the total number of contact conductors of theoptoelectronic devices of an optoelectronic module. This enables aparticularly short manufacturing duration for an optoelectronic module.The throughput in the production of a plurality of optoelectronicmodules can advantageously be increased in this way.

In a further configuration, the optoelectronic device is pressed ontothe connection carrier in step c). The force with which theoptoelectronic device is pressed on may be between 1 N and 100 Ninclusive, preferably between 2 N and 20 N inclusive, for example 5 N.The heat introduced into the optoelectronic device by means of theradiation can thus be transferred in an improved manner into theconnecting means and the connection area assigned to the contactconductor. The risk of overheating of the optoelectronic device in stepc) is advantageously reduced as a consequence.

In a further configuration, before step c), and in particular beforestep b), an optical unit is fixed to the optoelectronic device or to therespective optoelectronic device. Since, in step c), the optoelectronicmodule is heated predominantly in the predetermined impingement regionor the respective predetermined impingement region, it is possible toconsiderably reduce heating of the optical unit during the production ofan electrically conductive and/or thermally conductive connection of thecontact conductor to the respective connection area. On account of thegreatly reduced heating—in comparison with a reflow soldering method—ofthe optoelectronic module outside the predetermined impingement regionin step c), it is advantageously possible to equip the optoelectronicdevices with a respective optical unit even when the melting point ofthe material of the optical unit lies below the melting point of theconnecting means. The production of the optoelectronic module can thusbe simplified.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a first exemplary embodiment of an optoelectronic moduleaccording to the invention on the basis of a schematic sectional view,

FIG. 2A shows a perspective schematic view of an exemplary embodiment ofan optoelectronic device that is particularly suitable for anoptoelectronic module according to the invention and FIG. 2B shows aschematic sectional view of the optoelectronic device from FIG. 2A,

FIG. 3 shows a schematic plan view of a further exemplary embodiment ofan optoelectronic module,

FIGS. 4A to 4D show a schematic sectional view of an exemplaryembodiment of a method according to the invention for producing anoptoelectronic module on the basis of intermediate steps,

FIG. 5 shows a schematic illustration of an exemplary embodiment of adevice for carrying out step c) of a method according to the invention,

FIG. 6 shows a schematic illustration of a further exemplary embodimentof step c) of a method according to the invention, and

FIGS. 7A-7C show a schematic illustration of a further exemplaryembodiment of a method according to the invention in which radiationused to effect a connection follows movement of an optoelectronic moduleon a conveyor belt.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic sectional view of an optoelectronic module 1according to the invention. The optoelectronic module comprises anoptoelectronic device 2 having a contact conductor 25 and a furthercontact conductor 26. Furthermore, the optoelectronic device comprises ahousing body 20 delimited by lateral faces 203 in the lateral direction.The contact conductors 25 and 26 project laterally from the housingbody. In particular, the two contact conductors project from twoopposite lateral faces 203 of the housing body. This enables mounting ofthe optoelectronic device at the connection carrier, in which casestresses that possibly occur during mounting act predominantlysymmetrically on the housing body and can at least partly compensate forone another.

The housing body 20 preferably contains a plastic or is manufacturedfrom a plastic. Housing bodies of this type are distinguished primarilyby particularly cost-effective production. As an alternative, thehousing body may contain a ceramic, for example AlN or AlO, or bemanufactured from a ceramic. Ceramic materials may be distinguished by ahigh thermal conductivity. Heat generated during operation of theoptoelectronic device can thus be dissipated from the optoelectronicdevice particularly well via the housing body.

The optoelectronic device further comprises a semiconductor chip 21provided for generating radiation. The housing body 20 has a cavity 201,in which the semiconductor chip is arranged. A wall 202 of the cavity201 can be formed as a reflector for radiation generated in thesemiconductor chip. The power of the radiation emerging from theoptoelectronic device can thus be increased.

The semiconductor chip 21 is arranged on the contact conductor 25 and iselectrically conductively connected thereto. An electrically conductiveconnection of the semiconductor chip to the contact conductor 26 iseffected by means of a bonding wire 24, for example, which is led from asurface 210 of the semiconductor chip that is remote from the connectioncarrier to the contact conductor 26.

Furthermore, the semiconductor chip 21 is preferably embedded into anenclosure 22, which particularly preferably completely covers thesemiconductor chip and the bonding wire 24. Said enclosure can serve toprotect the semiconductor chip and the bonding wire against mechanicalloading and external ambient influences.

The optoelectronic device 2 is arranged on a connection carrier 3 of theoptoelectronic module 1. In this case, the connection carrier has aconnection area 30 and a further connection area 31, the contactconductor 25 being electrically conductively connected to the connectionarea 30 and the further contact conductor 26 being electricallyconductively connected to the further connection area 31. A connectingmeans 5 can be arranged between the contact conductors and therespective connection areas, said connecting means producing anelectrically conductive contact between the contact conductors and theconnection areas. The connecting means may be for example a solder, inparticular a lead-free solder, for instance an SnAg solder paste withflux. A connection carrier 3 on which a connecting means has alreadybeen deposited can also be used. By way of example, the connectioncarrier may be embodied as a circuit board that has already beenpre-tin-plated. Typically, a tin-containing layer having a thickness ofbetween 10 μm and 20 μm inclusive is applied on such a circuit board atleast in regions.

A local, delimited heating region 4 is in each case formed on that sideof the contact conductors 25 and 26 which is remote from the connectionareas. These local, delimited heating regions can be produced by meansof coherent radiation, for example. Preferably, the contact conductors25 and 26 are embodied in metallic fashion or contain at least onemetal. Metals having high electrical conductivity, such as, for example,copper, nickel, gold, titanium or platinum, are particularly suitable.As shown in FIG. 1, an optical unit 80 can be fixed to theoptoelectronic device 2. The Figure shows a slip-over optical unit, byway of example. In the case of a slip-over optical unit, the opticalunit at least partly reaches around the housing body 20circumferentially. The optical unit is preferably fixed mechanicallystably and permanently to the optoelectronic device, in particular tothe housing body. An intermediate layer 23, for example, which at leastpartly fills the interspace between the housing body or the enclosure 22and the optical unit 80 can be used for fixing. Preferably, the opticalunit projects in the lateral direction beyond the lateral face 203delimiting the semiconductor body in the lateral direction.

It goes without saying that the optical unit 80 can also be fixed to theoptoelectronic device 2 in a different way. By way of example, theoptical unit can be plugged on and, if appropriate, additionally beadhesively bonded on.

A radiation exit area 82 of the optical unit 80 is preferably formedrotationally symmetrically with respect to an optical axis 81 of theoptical unit. The optical axis 81 particularly preferably passes throughthe semiconductor chip 21. It is thus advantageously possible for theradiation generated in the semiconductor chip to be coupled out from theoptoelectronic device rotationally symmetrically with respect to theoptical axis.

The optical unit 80 can be embodied for forming a predetermined, inparticular directional emission characteristic of the radiationgenerated by the optoelectronic device 2. Since only local heating ofthe optoelectronic device is necessary for forming the electricallyconductive connection of the contact conductors 25 and 26 of theoptoelectronic device to the associated connection areas 30 and 31, therisk of damage to an optical unit fixed on the optoelectronic device canbe reduced.

Furthermore, an optical unit 80 fixed directly to the optoelectronicdevice enables a particularly space-saving design of the optoelectronicmodule 1. This is particularly advantageous for optoelectronic moduleswhich are provided for backlighting of a display device, such as an LCDfor example.

For forming a particularly uniform and, in particular in comparison withthe lateral extent of the semiconductor chip 21, large-area illuminationof a display device 95, the optical unit 80 is preferably embodied insuch a way that radiation emerging from the semiconductor chip, inparticular through a radiation coupling-out area 210, is predominantlynot emitted along the optical axis 81, but rather at a comparativelylarge angle with respect to the optical axis. In this case, the regionof the display device that is to be illuminated typically extendsperpendicular to the optical axis.

For this purpose, the radiation exit area 82 of the optical unit 80preferably has a concavely curved partial region 83, through which theoptical axis 81 particularly preferably passes. This concavely curvedpartial region acts like a divergent lens for radiation that emergesfrom the semiconductor chip 21 and impinges on said region, so that theradiation is refracted away from the optical axis. Illumination of alarge display device region in comparison with the lateral extent of thesemiconductor chip is thus fostered.

Circumferentially, the concavely curved partial region is at leastpartly surrounded by a convexly curved partial region 84. The radiationwhich is generated in the semiconductor chip and impinges on theconvexly curved partial region 84 is likewise refracted away from theoptical axis, thereby fostering emission from the optoelectronic deviceat large angles with respect to the optical axis.

The semiconductor chip 21, and in particular an active region of thesemiconductor chip that is provided for generating radiation, preferablycontains a III-V semiconductor. III-V semiconductors, in particularIn_(x)Ga_(y)Al_(1-x-y)P, In_(x), Ga_(y)Al_(1-x-y)N orIn_(x)Ga_(y)Al_(1-x-y)As, in each case where 0≦x≦1, 0≦y≦1 and x+y≦1, aredistinguished by high quantum efficiencies that can be obtained, whichenables a high conversion efficiency of electrical energy into,preferably visible, radiation power.

Semiconductors based on the material system In_(x)Ga_(y)Al_(1-x-y)N areparticularly suitable for the ultraviolet spectral range. In the visiblespectral range, the material system In_(x)Ga_(y)Al_(1-x-y)N is suitablefor colors in the range from blue to green. In_(x)Ga_(y)Al_(1-x-y)P, forexample, is particularly suitable for the yellow to red spectral range.The material system In_(x)Ga_(y)Al_(1-x-y)As, in particular, findsapplication in the infrared range.

It goes without saying that the optoelectronic module within the scopeof the invention can also have more than one optoelectronic device. FIG.3 shows for example an optoelectronic module in which in each case fouroptoelectronic devices 2, which can in each case be embodied asdescribed in connection with FIG. 1 or FIGS. 2A and 2B, are combined toform a group of optoelectronic devices 200. A rhomboidal arrangement ofthe optoelectronic devices 2 of a group of optoelectronic devices 200has proved to be particularly advantageous.

In the exemplary embodiment, three such groups are arranged alongsideone another at a centroidally equidistant distance from one another. Itgoes without saying that the number of groups of optoelectronic devices200 can differ from three.

A group of optoelectronic devices 200 in each case preferably containsoptoelectronic devices 2 which emit at least in two different spectralcolor regions of the, in particular visible, spectral range. Preferably,the optoelectronic devices 2 are in this case formed, in particular withregard to color locus and power of the emitted radiation, in such a waythat white mixed light arises as a result of additive color mixing ofthe radiation emitted by the optoelectronic devices of a group 200.

Particularly preferably, a group 200 comprises an optoelectronic device2 which emits in the blue spectral range, an optoelectronic device 2which emits in the green spectral range, and a further optoelectronicdevice 2 which emits in the red spectral range. In the case of a groupof optoelectronic devices 200 comprising four optoelectronic devices,the group preferably has a total of two optoelectronic devices 2 whichemit radiation in the green spectral range. By means of a second one inthe green spectral range, the radiation power can be set in a simplifiedmanner in this spectral range such that white mixed light arises.

An optoelectronic module 1 which has such groups of optoelectronicdevices 200, provided for generating white mixed light, is thereforeparticularly suitable for backlighting a display device 95.

The groups 200 of the optoelectronic devices are preferably arrangedcentroidally at an equidistant distance from one another, therebyenabling an area of a display device that is to be illuminated to besubjected to illumination that is as far as possible uniform andhomogeneous over a large region. It goes without saying that the groupsof the optoelectronic devices 200 can also be arranged in matrix-likefashion or in the form of a honeycomb pattern in order to enablelarge-area illumination of a display device.

An alternative exemplary embodiment of an optoelectronic device is shownin FIGS. 2A and 2B, wherein FIG. 2A offers a perspective view of theoptoelectronic device. FIG. 2B shows a perspective sectional viewthrough the illustration of FIG. 2A. The optoelectronic device differsfrom the optoelectronic device shown in FIG. 1 by virtue of the factthat the optoelectronic device has an additional thermal contactconductor 27 in addition to the electrical contact conductors 25 and 26.The semiconductor chip 21 is arranged on the thermal contact conductor27 and mechanically stably connected thereto preferably by a thermallyconductive connecting means. The thermal contact conductor ispredominantly not formed for the electrical contact-connection of thesemiconductor chip, but rather for the dissipation of the heat generatedin the semiconductor chip during the operation of the optoelectronicdevice from the semiconductor chip. This is particularly advantageousfor high-power light emitting diodes provided for generating radiationwith a comparatively high output power. The power consumption of suchhigh-power light emitting diodes can be 1 W or more in this case. Theelectrical contact-connection is once again effected by means of theelectrical contact conductors 25, 26.

The semiconductor chip is once again arranged in a cavity 201, thecavity being formed in a surface 204 of the housing body 20.

The thermal contact conductor preferably extends from the bottom of thecavity 206 as far as a surface 205 of the housing body 20 which isremote from the surface 204. Particularly preferably, the thermalcontact conductor projects from the housing body on the side of thesurface 205. In the event of mounting the device, the optoelectronicdevice therefore predominantly bears on the thermal contact conductor,which enables the heat generated in the semiconductor chip 21 duringoperation of the optoelectronic device to be dissipated particularlyefficiently. The heat dissipation can therefore be effectedindependently of the electrical contact conductors 25 and 26additionally and predominantly by the thermal contact conductor 27.

FIGS. 4A to 4D schematically show an exemplary embodiment of a methodaccording to the invention for producing an optoelectronic module. Inthis case, the production of an optoelectronic module with twooptoelectronic devices is illustrated by way of example. It goes withoutsaying that an optoelectronic module can also have only oneoptoelectronic device or more than two optoelectronic devices. As shownin FIG. 4A, firstly a connection carrier 3 is provided. In this example,the connection carrier has a total of four connection areas 30, 31, aconnection area in each case being assigned to a contact conductor ofthe optoelectronic device to be fixed.

Optionally, a connecting means 5 can subsequently be applied for exampleon the connection carrier 3 (FIG. 4B). This is not absolutely necessary,however. As an alternative, the connecting means can for example also beapplied on the contact conductors of the respective optoelectronicdevice to be fixed. A connection carrier 3 on which a connecting meanshas already been deposited can also be used. This may be apre-tin-plated circuit board, for example.

The optoelectronic devices 2 are thereupon arranged on the connectioncarrier 3 (FIG. 4C). In this case, the optoelectronic devices 2 eachhave a contact conductor 25 and a further contact conductor 26. Theoptoelectronic devices are arranged on that side of the connectioncarrier on which the connection areas 30 and 31 are formed. Preferably,the optoelectronic devices are oriented with respect to the connectioncarrier in such a way that the contact conductors 25 and 26 at leastpartly overlap the associated connection areas 30 and 31, respectively.

The connection carrier 3 may be for example a circuit board, forinstance a printed circuit board (PCB), in which case the connectionareas 30, 31 may be formed by means of conductor tracks of the circuitboard.

As shown in FIG. 4D, a local, delimited heating region is formed on thatside of the contact conductors 25 and 26 which is remote from theconnection areas 30 and 31, respectively.

These local, delimited heating regions 4 arise owing to local heating ofthe optoelectronic module, an electrically conductive and/or thermallyconductive connection being produced between the contact conductors 25and 26 and the associated connection areas 30 and 31, respectively. Inthis case, the local heating is realized by means of coherent radiation6, for example laser radiation. The coherent radiation impinging on thecontact conductor from that side of the contact conductor which isremote from the connection carrier.

The energy introduced into the respective contact conductor 25, 26 bymeans of the radiation is expediently chosen to have a magnitude suchthat the connecting means 5 arranged at least in regions between thecontact conductors 25 and 26 and the respective connection area 30 and31 is heated above its melting point and melts. After the conclusion ofthe irradiation, the connecting means cools down, such that anelectrically conductive and/or thermally conductive connection betweenthe contact conductors and the respective connection areas arises afterthe solidification of the connecting means. These electricallyconductive and/or thermally conductive connections preferably serve inaddition for the mechanically stable fixing of the optoelectronicdevices to the connection carrier.

Furthermore, the contact conductor 25 and, if appropriate, the furthercontact conductor 26 is preferably embodied in such a way as to simplifya thermally conductive and/or electrically conductive connection bymeans of a connecting means. The contact conductor may bepre-tin-plated, for example, that is to say that the contact conductoris coated with a tin layer completely or at least in regions.

The optoelectronic devices 2 can be pressed onto the connection carrierby means of a pressing-on device 70 during the production of anelectrically conductive and/or thermally conductive connection of thecontact conductors 25 and 26 to the respective connection areas 30 and31. The force with which the optoelectronic device is pressed on may bebetween 1 N and 100 N inclusive, preferably between 2 N and 20 Ninclusive, for example 5 N. A thermal connection of the contactconductor to the underlying connecting means 5 can thereby be fosteredduring the local heating of the respective contact conductor. Themagnitude of the energy which has to be introduced into the contactconductor in the form of radiation for the melting of the connectingmeans can be advantageously reduced in this way. The risk of damage tothe optoelectronic device or the optical unit fixed thereto, for exampleon account of irreversible deformation caused thermally, can thus bereduced.

The power density of the coherent radiation 6 which impinges in thepredetermined impingement region 45 (see FIG. 5) is preferably between 1and 500 W/(mm²) inclusive, particularly preferably between 10 and 150W/(mm²) inclusive, in said region.

The production of an electrically and/or thermally conductive connectionbetween the contact conductors 25 and 26 and the associated connectionareas 30 and 31 can be individually effected sequentially for eachcontact conductor. As an alternative, the coherent radiation can besplit into a plurality of partial beams, such that the optoelectronicmodule can be locally heated simultaneously at a plurality of locationsand an electrically conductive and/or thermally conductive connectionbetween a plurality of contact conductors 25 and 26 and an associatedconnection area 30, 31 can thus be obtained simultaneously.

FIG. 5 schematically illustrates an exemplary embodiment of a device forproducing an electrically conductive and/or thermally conductiveconnection. For the sake of clarity, the optoelectronic module 1 showncomprises only one optoelectronic device 2. It goes without saying,however, that the optoelectronic module can also have a plurality ofoptoelectronic devices. A radiation source 61 of the coherent radiation6 is embodied as a solid-state laser, for example as an Nd-YAG laser.The laser is preferably operated in the continuous wave operating mode(cw mode). The radiation that emerges from the coherent radiation source61 is coupled into an optical waveguide fiber 62. The radiation thatemerges from said optical waveguide fiber is split into a partial beam65 and a further partial beam 66 by means of a beam-splitting assembly64.

The beam splitting assembly 64 is preferably formed such that it ismovable along the beam path of the coherent radiation 6. By way ofexample, the beam-splitting assembly is formed by means of two wedgeplates 64A and 64B adjoining one another. By means of movement of thebeam-splitting assembly along the beam path, the distance at which thepartial beams impinge on the optoelectronic module 1 can thus be set ina simplified manner.

It goes without saying that the beam-splitting assembly can also beformed for forming more than two partial beams. By way of example, fourpartial beams can be generated by arranging a further pair of wedgeplates in the beam path of the coherent radiation 6, the area in whichthe two wedge plates of the further pair abut one another and the areain which the wedge plates of the first pair of wedge plates adjoin oneanother being arranged at an acute angle different than 0° or at a rightangle with respect to one another. As an alternative, the movablebeam-splitting group 64 can be dispensed with. Only one beam is madeavailable in this case.

The partial beams 65 and 66 shown in FIG. 5 are fed to a radiationconcentrating optical unit 63. The beam concentrating optical unitcomprises a collimation optical unit 67 and a focusing optical unit 68.The two partial beams are collimated by means of the collimation opticalunit and subsequently focused by means of the focusing optical unit,such that the radiation can be concentrated at two focal points spacedapart from one another.

The radiation that emerges from the radiation concentrating optical unit63 is subsequently deflected onto the optoelectronic module 1 by meansof a deflection optical unit 60.

In this case, the distance at which the partial beams 65 and 66 impingeon the optoelectronic module can be set by means of movement of thebeam-splitting assembly 64 along the beam path in such a way that thepartial beam 65 impinges within a first predetermined impingement region45 on the optoelectronic module 1 and the further partial beam 66impinges within a further predetermined impingement region 46 on theoptoelectronic module.

Preferably, the partial beams 65 and 66 impinge on the contact conductor25 and the contact conductor 26, respectively, of the optoelectronicdevice 2. On the respective contact conductors 25 and 26, a localdelimited heating region 4 is in each case formed by the local heatingof the contact conductors by means of the coherent radiation 6, saidheating region at least partly overlapping the respective impingementregions 45 and 46 of the coherent radiation 6.

On account of the radiation being split into two partial beams, it ispossible, in particular, to locally heat two contacts of theoptoelectronic device simultaneously and therefore to simultaneouslyproduce an electrically conductive and/or thermally conductiveconnection of the contact conductors 25 and 26 to the respectiveconnection areas 30 and 31. This accelerates the production of theoptoelectronic module. In an optoelectronic device 2 in which thecontact conductors project from opposite sides of the housing body 20,simultaneous production of an electrically and/or thermally conductiveconnection is particularly advantageous, moreover, since the heat inputinto the optoelectronic device 2 is thus comparatively symmetrical withrespect to the contact conductors. The risk of deformation or tilting ofthe optoelectronic device on account of thermal stresses caused byasymmetrical heating during the local heating of the optoelectronicdevice can be advantageously reduced in this way.

It goes without saying that it is possible, as described in connectionwith FIG. 4, for the optoelectronic device 2 once again to be pressed onby means of a pressing-on device 70 during the production of anelectrically and/or thermally conductive connection of the contactconductors 25 and 26 to the respective connection areas 30 and 31. Thisis not explicitly shown for reasons of clarity.

The deflection optical unit 60 may be formed by means of a mirror, whichis preferably mounted such that it is movable at least with respect toone axis. Rotation of the mirror with respect to said axis thereforemakes it possible to vary the position at which the coherent radiation 6impinges on the optoelectronic module 1 along one direction. Thedeflection optical unit 60 is particularly preferably formed by means oftwo mirrors, in which case said mirrors can be rotated about their ownaxis in each case. In particular, the mirrors and the associated axesare oriented with respect to one another in such a way that the positionat which the radiation 6 impinges on the optoelectronic module 1 can bevaried by means of rotation of the first mirror in a first direction andby means of the second mirror in a direction perpendicular to the firstdirection. The coherent radiation can thus be directed onto thepredetermined impingement region on the optoelectronic module in asimplified manner.

In contrast to what is shown in FIG. 5, the radiation from the radiationsource 61 can also impinge on the optoelectronic module 1 from that sideof the connection carrier 3 which is remote from the optoelectronicdevice 2. This is illustrated in FIG. 6. In this case, the radiation 6passes through a cutout 35 in the connection carrier 3 and leads tolocal heating of the connecting means 5, such that a thermally and/orelectrically conductive connection is produced between the contactconductor 25 and the connection area 30.

The cutout 35 may be formed as a drilled hole, for example. The diameterof the cutout is preferably 5 mm or less, particularly preferably 3 mmor less, for example 2 mm.

It goes without saying that in this variant, too, the optoelectronicdevice 2 can have more than one contact conductor 25. In this case, thecontact conductors can be assigned a respective cutout on theoptoelectronic module.

An optoelectronic device in which the contact conductors or theplurality of contact conductors are formed on that side of theoptoelectronic device which faces the connection carrier isdistinguished by the fact that the optoelectronic device can be arrangedon the connection carrier in particularly space-saving fashion. As aresult, it is possible to arrange a plurality of optoelectronic devicesin an optoelectronic module at a particularly small distance from oneanother. Furthermore, this variant is suitable particularly for athermal contact conductor of an optoelectronic device 2 since it ispossible to form a comparatively large-area connection to the associatedconnection area of the connection carrier for efficient heatdissipation.

The optoelectronic device 2 is preferably embodied as a surfacemountable device (SMD). In this case, the connection area 30 assigned tothe contact conductor 25 and, if appropriate, to the further contactconductor 26 is arranged on that side of the connection carrier whichfaces the optoelectronic device. Consequently, the contact conductors donot extend through the connection carrier 3 and in particular throughthe cutout 35 of the connection carrier.

For the production of an electrically and/or thermally conductiveconnection by means of radiation which is radiated in through the cutout35, it is expedient for the contact conductor 25 and the cutout to atleast partly overlap. The connecting means 5 and the cutout alsopreferably at least partly overlap. In this way, a thermally and/orelectrically conductive connection between the contact conductor 25 andthe assigned connection area 30 can be produced in a simplified manner.

It goes without saying that the further features of the method whichhave been described in connection with FIGS. 4 and 5 can also beapplicable to a method in accordance with FIG. 6. In particular, theoptoelectronic module can comprise a plurality of optoelectronicdevices.

FIGS. 7A to 7C show an exemplary embodiment of the production method inwhich the optoelectronic module, during the production of theelectrically conductive and/or thermally conductive connection of thecontact conductor 25 to the connection area 30, is moved relative to theradiation source 61 of the coherent radiation and the radiation istracked to the movement of the optoelectronic module.

Details of the method and of the optoelectronic module that were shownin the previous Figures are not shown explicitly in FIG. 7 unless theyare essential for the tracking of the radiation or the movement of theoptoelectronic module. FIGS. 7A to 7C in each case show a firstoptoelectronic module 1A and a second optoelectronic module 1B. Inaddition, a radiation source 61 is indicated, the coherent radiation 6of which is deflected by means of a deflection optical unit 60. In FIG.7A, the deflection optical unit 60 is situated in a starting position600, so that the radiation generated by the radiation source impinges onthe optoelectronic module 1A in a predetermined impingement region 45.

The coherent radiation 6 can be split into a plurality of partial beamsas described in connection with FIG. 5, so that the radiation can alsoimpinge simultaneously in a corresponding plurality of predeterminedimpingement regions on the optoelectronic module.

During the local heating of the optoelectronic module 1A in theimpingement region 45, the optoelectronic module is moved in thedirection of the arrow 605 by means of a conveyor device 90, for examplea conveyor belt. In this case, the movement is effected preferablycontinuously and in particular at a constant speed.

As illustrated schematically in FIG. 7B, the radiation generated by theradiation source 61 is tracked to the movement of the optoelectronicmodule 1A by means of movement of the deflection optical unit 60 in thedirection of the arrow 601 in such a way that the radiation 6, in stepc), impinges on the optoelectronic module within the predeterminedimpingement region 45 despite movement of the optoelectronic module.

In FIG. 7C, the arrow 602 indicates that the deflection optical unit isreturned to the starting position 600 in a further step of the method,so that the radiation is then directed onto the subsequent module 1B inan impingement region 45. After the deflection optical unit has returnedto the starting position 600, therefore, the method described can becarried out for the subsequent module 1B.

Particularly preferably, the advance of the conveyor device 90 isadapted to the duration of the production of the electrically and/orthermally conductive connections of the respective contact conductors ofthe respective optoelectronic devices 2 of an optoelectronic module 1 tothe respective connection areas of the connection carrier in such a waythat in the time which elapses between the steps shown in FIGS. 7A to7C, the optoelectronic module 1B is moved to a position at which theradiation is directed onto the predetermined impingement region 45 onthe module 1B when the deflection optical unit is positioned in thestarting position 600.

The movement of the optoelectronic modules during the production of anelectrically conductive and/or thermally conductive contact in step c)of the method advantageously makes it possible to increase thethroughput in the production of a multiplicity of optoelectronicmodules. Stopping of the conveyor belt during the production of theelectrically conductive and/or thermally conductive connections of thecontact conductor to the connection area can advantageously be avoided.

The production of an electrically and/or thermally conductive connectionin step c) of the method typically requires local heating for a timeduration of only 2 s or less, preferably 500 ms or less, for example 200ms. Particularly in the case of an optoelectronic module 1 whichcontains only a comparatively small number of optoelectronic devices 2,for example 100 optoelectronic devices or fewer, the production durationfor an optoelectronic module can be significantly reduced in comparisonwith production in a reflow method.

Furthermore, it may be advantageous that the optoelectronic module 1 isonly locally heated for the purpose of producing an electrically and/orthermally conductive connection of a contact conductor 25 to theassociated connection area 30. Regions of the optoelectronic modulewhich are at a distance from the impingement region 45 and, ifappropriate, the impingement region 46 of the radiation areadvantageously not heated directly by the coherent radiation 6 and aretherefore heated only comparatively weakly in comparison with thepredetermined impingement regions 45 and 46. This is advantageous inparticular for optoelectronic devices 2 which are generally sensitive toheating. In particular, before producing an electrically and/orthermally conductive connection of the contact conductors 25 and 26 tothe associated connection areas 30 and 31, respectively, of theconnection carrier 3, an optical unit 80 can in each case be fixed tothe optoelectronic devices 2 even though the melting point of thematerial of the optical unit lies below the melting point of theconnecting means 5. The risk of damage to the optoelectronic device andin particular to the optical unit fixed thereto, for example on accountof irreversible deformation caused thermally, can be reduced on accountof the comparatively low heating of the optoelectronic device outsidethe predetermined impingement regions 45, 46.

The scope of protection of the invention is not limited to the examplesgiven hereinabove. The invention is embodied in each novelcharacteristic and each combination of characteristics, whichparticularly includes every combination of any features which are statedin the claims, even if this feature or this combination of features isnot explicitly stated in the claims or in the examples.

1. An optoelectronic module comprising: at least one optoelectronicdevice with a housing body and a contact conductor; and a connectioncarrier with a connection area, wherein the contact conductor iselectrically conductively and/or thermally conductively connected to theconnection area by connecting means arranged between the contactconductor and the connection carrier, said connecting means containing asolder; wherein the optoelectronic device is arranged on a main side ofthe connection carrier; wherein the connection carrier has a cutoutwhich is at least partly covered by the contact conductor and theconnection means and which extends through the connection carrier; andwherein the optoelectronic device has a further contact conductor,wherein the contact conductor and the further contact conductor projectfrom the housing body on opposite sides of the housing body.
 2. Theoptoelectronic module as claimed in claim 1, wherein an optical unit isfixed to the optoelectronic device.
 3. The optoelectronic module asclaimed in claim 2, wherein the optical unit contains a plastic.
 4. Theoptoelectronic module as claimed in claim 2, in which the optoelectronicdevice has a housing body, and wherein the optical unit is fixed to thehousing body of the optoelectronic device and the optical unit extendsbeyond a lateral face delimiting the housing body.
 5. The optoelectronicmodule as claimed in claim 1, further comprising an additional thermalcontact conductor, which is formed on that side of the housing bodywhich faces the connection carrier.
 6. The optoelectronic module asclaimed in claim 1, in which the contact conductor is formed on thatside of the housing body which faces the connection carrier.
 7. Theoptoelectronic module as claimed in claim 1, in which the optoelectronicmodule has at least one further optoelectronic device with a contactconductor.
 8. The optoelectronic module as claimed in claim 7, in whichthe further optoelectronic device is formed in accordance with theoptoelectronic device such that an optical unit is fixed to the furtheroptoelectronic device.
 9. The optoelectronic module as claimed in claim7, further comprising two optoelectronic devices, which emit radiationin different color regions of the electromagnetic spectrum.
 10. Theoptoelectronic module as claimed in claim 1, wherein the optoelectronicmodule is provided for backlighting a display device.
 11. Theoptoelectronic module as claimed in claim 1, wherein the optoelectronicmodule is provided for backlighting an LCD.
 12. The optoelectronicmodule as claimed in claim 1, wherein the cutout is completely coveredby the contact conductor.
 13. The optoelectronic module as claimed inclaim 1, wherein the cutout is completely surrounded by the connectionarea on a main face of the connection carrier.
 14. The optoelectronicmodule as claimed in claim 1, wherein a side of the optoelectronicdevice facing at least one of the connection carrier and a thermalcontact conductor of the optoelectronic device is in complete contactwith a side of the connection carrier facing the device.
 15. A methodfor producing an optoelectronic module comprising at least oneoptoelectronic device with at least one contact conductor and aconnection carrier with at least one connection area, wherein the methodcomprises the steps of: a) providing the connection carrier with theconnection area; b) arranging the optoelectronic device on theconnection carrier; and c) locally heating the optoelectronic module ina predetermined impingement region by means of coherent radiation,wherein, in step c), an electrically and/or thermally conductiveconnection is produced between the contact conductor and the connectionarea by conductive connecting means containing a solder; wherein theoptoelectronic device is arranged on a main side of the connectioncarrier; wherein the connection carrier has a cutout which is at leastpartly covered by the contact conductor and the connection means andwhich extends through the connection carrier; and wherein in step c) thecoherent radiation passes through the cutout of the connection carrierfrom a side of the connection carrier which is remote from theoptoelectronic device.
 16. The method for producing an optoelectronicmodule as claimed in claim 15, wherein, in step c), the optoelectronicmodule is moved relatively to a radiation source of the coherentradiation during the production of the electrically conductive and/orthermally conductive connection between the contact conductor and theconnection area.
 17. The method for producing an optoelectronic moduleas claimed in claim 16, wherein the coherent radiation is tracked to themovement of the optoelectronic module relative to the radiation sourcein such a way that the radiation impinges on the optoelectronic modulewithin the predetermined impingement region for the heating.
 18. Themethod for producing an optoelectronic module as claimed in claim 17,wherein, in step c), the radiation is directed onto the optoelectronicmodule by means of a movable deflection optical unit.
 19. The method forproducing an optoelectronic module as claimed in claim 18, wherein, instep c), the movable deflection optical unit is moved proceeding from astarting position for tracking the radiation, and the deflection opticalunit is returned to the starting position after step c) in a step d).20. The method for producing an optoelectronic module as claimed inclaim 19, wherein, after step d), step c) is carried out for a further,separate optoelectronic module.
 21. The method as claimed in claim 15,wherein the coherent radiation impinges on the predetermined impingementregion for 2 s or less.
 22. The method for producing an optoelectronicmodule as claimed in claim 15, wherein the coherent radiation isgenerated by means of a laser.
 23. The method for producing anoptoelectronic module as claimed in claim 15, wherein the connectingmeans is electrically conductive and/or thermally conductive.
 24. Themethod for producing an optoelectronic module as claimed in claim 15,wherein the connecting means is a solder.
 25. The method for producingan optoelectronic module as claimed in claim 15, wherein theelectrically conductive and/or thermally conductive connecting means isapplied to the connection carrier at least in regions before step c).26. The method for producing an optoelectronic module as claimed inclaim 15, wherein, in step c), the coherent radiation impinges on thecontact conductor from that side of the contact conductor which isremote from the connection carrier, and the connecting means is heatedthrough the contact conductor.
 27. The method for producing anoptoelectronic module as claimed in claim 15, wherein, in step c), alocal, delimited heating region is formed on the contact conductor. 28.The method for producing an optoelectronic module as claimed in claim15, wherein the coherent radiation is split into a plurality of partialbeams by means of a beam-splitting assembly before impinging on theoptoelectronic module.
 29. The method for producing an optoelectronicmodule as claimed in claim 28, wherein a distance at which a partialbeam and a further partial beam impinge on the optoelectronic module isset by moving the beam-splitting assembly along a beam path of thecoherent radiation.
 30. The method for producing an optoelectronicmodule as claimed in claim 29, wherein the optoelectronic module has afurther impingement region at a predetermined distance from theimpingement region, and the distance at which the partial beam and thefurther partial beam impinge on the optoelectronic module in step c) isset by means of movement of the beam-splitting assembly in such a waythat the partial beam impinges on the optoelectronic module within theimpingement region and the further partial beam impinges on saidoptoelectronic module within the further impingement region.
 31. Themethod for producing an optoelectronic module as claimed in claim 30,wherein the optoelectronic module has a further contact conductor and afurther connection area of the connection carrier, and wherein thefurther connection area is assigned to the further contact conductor.32. The method for producing an optoelectronic module as claimed inclaim 31, wherein, in step c), the contact conductor and the furthercontact conductor are electrically conductively and/or thermallyconductively connected by means of the partial beam and the furtherpartial beam, respectively, simultaneously to the connection area andfurther connection area, respectively.
 33. The method for producing anoptoelectronic module as claimed in claim 31, wherein, in step c),firstly the contact conductor and the further contact conductor of afirst optoelectronic device of the at least one optoelectronic deviceare electrically conductively and/or thermally conductively connected tothe respectively assigned connection area and further connection areaand wherein step c) is subsequently repeated with respect to a secondoptoelectronic device of the same optoelectronic module.
 34. The methodfor producing an optoelectronic module as claimed in claim 15, whereinthe optoelectronic module comprises at least one further optoelectronicdevice with a contact conductor and the at least one furtheroptoelectronic device is likewise arranged on the connection carrier instep b).
 35. The method for producing an optoelectronic module asclaimed in claim 15, wherein the optoelectronic device is pressed ontothe connection carrier in step c).
 36. The method for producing anoptoelectronic module as claimed in claim 15, wherein, before step c),an optical unit is fixed to the optoelectronic device.
 37. The method asclaimed in claim 15, wherein the coherent radiation impinges thepredetermined impingement region for 500 ms or less.
 38. The method asclaimed in claim 15, wherein the radiation for the soldering passesthrough the whole connection carrier.